Shot-noise suppression in Schottky barrier diodes

被引:7
作者
Gomila, G
Reggiani, L
Rubí, JM
机构
[1] Univ Lecce, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy
[2] Univ Lecce, Ist Nazl Fis Mat, I-73100 Lecce, Italy
[3] Univ Barcelona, Dept Fis Fonamental, E-08028 Barcelona, Spain
关键词
D O I
10.1063/1.1288219
中图分类号
O59 [应用物理学];
学科分类号
摘要
We give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes the effects of the Coulomb interaction negligible on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the crossover between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot noise. Similar ideas can be used to interpret the noise properties of other semiconductor devices. (C) 2000 American Institute of Physics. [S0021- 8979(00)03418-6].
引用
收藏
页码:3079 / 3081
页数:3
相关论文
共 9 条
[1]   Local noise analysis of a Schottky contact: Combined thermionic-emission-diffusion theory [J].
Gomila, G ;
Bulashenko, OM ;
Rubi, JM .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (05) :2619-2630
[2]   Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes [J].
Gomila, G ;
Bulashenko, OM .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :1004-1012
[3]   Microscopic analysis of electron noise in GaAs Schottky barrier diodes [J].
Gonzalez, T ;
Pardo, D ;
Reggiani, L ;
Varani, L .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2349-2358
[4]   MONTE-CARLO ANALYSIS OF NOISE SPECTRA IN SCHOTTKY-BARRIER DIODES [J].
GONZALEZ, T ;
PARDO, D ;
VARANI, L ;
REGGIANI, L .
APPLIED PHYSICS LETTERS, 1993, 63 (22) :3040-3042
[5]  
Gruzinskis V, 1998, APPL PHYS LETT, V73, P2488, DOI 10.1063/1.122491
[6]   TRANSIT-TIME EFFECTS IN THE NOISE OF SCHOTTKY-BARRIER DIODES [J].
TRIPPE, M ;
BOSMAN, G ;
VANDERZIEL, A .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1986, 34 (11) :1183-1192
[7]  
van der Ziel A., 1986, NOISE SOLID STATE DE
[8]   SHOT NOISE IN SCHOTTKY-BARRIER DIODES AS DIFFUSION NOISE [J].
VANDERZIEL, A .
PHYSICA B & C, 1978, 94 (03) :357-358
[9]   MACROSCOPIC AND MICROSCOPIC METHODS FOR NOISE IN DEVICES [J].
VANVLIET, CM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) :1902-1915