Indium-Doped MgxZn1-xO Films for ZnO-Based Heterojunction Diodes

被引：4

作者：

Tsuboi, Takako ^{[1
]}

Yamamoto, Kenji ^{[2
]}

Nakamura, Atsushi ^{[1
]}

Temmyo, Jiro ^{[1
,2
]}

机构：

[1] Shizuoka Univ, Res Inst Elect, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

[2] Shizuoka Univ, Grad Sch Sci & Technol, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

CHEMICAL-VAPOR-DEPOSITION; OPTICAL-PROPERTIES; PLASMA; EPITAXY; GROWTH;

D O I：

10.1143/JJAP.49.04DG13

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium-doped MgxZn1-xO (MgxZn1-xO:In) thin film and ZnO:In thin films were successfully grown by remote plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The In supply source used is trimethylindium (TMIn). The surface morphology, structural changes, and optical band gap energy in MgxZn1-xO:In were investigated by varying the amount of the supplied TMIn and were compared with ZnO: In systems. Our main achievement point is that we have markedly improved the surface morphology of Mg0.05Zn0.95O:In films from being pillar like to being film like with an increase in the amount of indium. The improved green electoluminescence emission (EL) characteristic the ZnO-based DH system was employing the Mg0.05Zn0.95O: In film here and in conclusions. (C) 2010 The Japan Society of Applied Physics

引用

页数：4

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