Bi4Ge3O12;
crystal;
energy resolution;
radiation damage;
D O I:
10.1016/j.ceramint.2003.12.157
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
In this work, we grew Bi4Ge3O12 (BGO) crystals of two types by Bridgmen-Stockbarger technology in different temperature gradients and compared their optical transmissions and energy resolutions before and after ultraviolet irradiation. It was found that the optical transmissions and energy resolutions of the two types of BGO crystals are similar before UV-irradiation. After UV-irradiation, the optical transmissions at 480 run of the first type of BGO crystals which were grown in higher temperature gradient cut down about 20% and their energy resolutions obviously deteriorated from about 12-18%. But the optical transmissions and energy resolutions of the second type of BGO crystals which were grown in lower temperature gradient keep unchanged on the whole. After 250 degreesC/4 h annealing, the optical transmissions and energy resolutions of the second type of BGO crystals can be completely recovered, whereas the optical transmissions and energy resolutions of the first type of BGO crystals cannot be completely recovered until through 600 degreesC/8 h annealing. The reason for the difference between the first and second type of BGO crystals is discussed. (C) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机构:
Chinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R China
Yin, Z. W.
;
Feng, X. Q.
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R China
Feng, X. Q.
;
Hu, G. Q.
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R China
机构:
Chinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R China
Yin, Z. W.
;
Feng, X. Q.
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R China
Feng, X. Q.
;
Hu, G. Q.
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, 1295 Ding Xi Rd, Shanghai 200050, Peoples R China