A 2.4-GHz CMOS LNA with harmonic cancellation and current reuse technique

被引：0

作者：

Kwon, I ^{[1
]}

Gil, J ^{[1
]}

Lee, K ^{[1
]}

Shin, H ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷 / 02期

关键词：

low noise amplifie; COMS LNA; RF COMS harmonic cancellation; current reuse;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A 2.4 GHz CMOS low noise amplifier (LNA) with 3rd order harmonic cancellation and a bias current reuse technique is proposed. To cancel the 3rd- order harmonics, we use a cascode stage and an additional common source stage which share the bias current. The current reuse technique is used to increase the amplifier gain for the LNA without increasing the power dissipation. Thus, the same amplifier gain for the LNA will be achieved at decreased power dissipation. The designed 2.4-GHz LNA using 0.18 mum CMOS technology achieves a power gain of 8.1 dB, a noise figure of 1.95 dB, and an IIP3 of 4 dBm even at a power consumption of 0.75 mW.

引用

页码：251 / 254

页数：4

共 9 条

[1] A 900-MHz, 0.8-μm CMOS low noise amplifier with 1.2-dB noise figure [J].

Floyd, BA ;

Mehta, J ;

Gamero, C ;

O, KK .

PROCEEDINGS OF THE IEEE 1999 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 1999, :661-664

[2]

Han K, 2002, J KOREAN PHYS SOC, V40, P45

[3] Broadband, 0.25μm CMOS LNAs with Sub-2dB NF for GSM applications [J].

Huang, QT ;

Orsatti, P ;

Piazza, F ;

Yoshitomi, T .

IEEE 1998 CUSTOM INTEGRATED CIRCUITS CONFERENCE - PROCEEDINGS, 1998, :67-70

[4] A 2.7-V 900-MHz CMOS LNA and mixer [J].

Karanicolas, AN .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (12) :1939-1944

[5]

Kwon I, 2002, J KOREAN PHYS SOC, V40, P4

[6]

Lee J, 2001, J KOREAN PHYS SOC, V39, P8

[7]

Moon YK, 2000, J KOREAN PHYS SOC, V37, P803, DOI 10.3938/jkps.37.803

[8] A 1.5-V, 1.5-GHz CMOS low noise amplifier [J].

Shaeffer, DK ;

Lee, TH .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (05) :745-759

[9] On-chip spiral inductors with patterned ground shields for Si-based RF IC's [J].

Yue, CP ;

Wong, SS .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (05) :743-752

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