Very High Mobility in Solution-Processed Organic Thin-Film Transistors of Highly Ordered [1]Benzothieno[3,2-b]benzothiophene Derivatives

被引:250
作者
Uemura, Takafumi [1 ]
Hirose, Yuri [1 ]
Uno, Mayumi [1 ]
Takimiya, Kazuo [2 ]
Takeya, Jun [1 ,3 ]
机构
[1] Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan
[2] Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Hiroshima 7398527, Japan
[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3330012, Japan
关键词
FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; CHARGE-TRANSPORT; SINGLE-CRYSTALS; PENTACENE; SURFACE;
D O I
10.1143/APEX.2.111501
中图分类号
O59 [应用物理学];
学科分类号
摘要
Field-effect mobility as high as 5 cm(2)/(V S) is achieved in solution-processed organic thin-film transistors with the development of a method for growing highly-oriented crystalline films of [1]benzothieno[3,2-b]benzothiophene derivatives. A droplet of the solution is sustained at an edge of a structure on an inclined substrate, so that the crystalline domain grows in the direction of inclination. The oriented growth realizes excellent molecular ordering that manifests itself in micrometer-scale molecular terraces on the surface as a result of the self-organizing function of the material. The unprecedented performance achieved using an easy fabrication process has increased attractiveness of organic thin-film transistors for industrial applications. (C) 2009 The Japan Society of Applied Physics
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页数:3
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