Measuring Charge Transport in a Thin Solid Film Using Charge Sensing

被引：4

作者：

MacLean, Kenneth ^{[1
]}

Mentzel, Tamar S. ^{[1
]}

Kastner, Marc A. ^{[1
]}

机构：

[1] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 03期

关键词：

Nanoscale electrometer; thin film; charge transport; amorphous semiconductor; LOCALIZED STATES; SPECTROSCOPY; DENSITY;

D O I：

10.1021/nl904280q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We measure charge transport in a hydrogenated amorphous silicon (a-Si:H) thin film using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances even in the presence of blocking contacts. At high temperatures, where the resistance of [he a-Si:H is not too large, the charge detection measurement agrees with a direct measurement of current. The device geometry allows LIS to probe both the held effect and dispersive transport in the a-Si:H using charge sensing and to extract the density of states near the Fermi energy.

引用

页码：1037 / 1040

页数：4

共 21 条

[1] ANALYSIS OF THERMALLY STIMULATED CAPACITOR-DISCHARGE METHOD FOR CHARACTERIZING LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS [J].