Antiferroelectric stability and energy storage properties of Co-doped AgNbO3 ceramics

被引:53
作者
Feng, Danni [1 ]
Du, Huiling [1 ]
Ran, Hongpei [1 ]
Lu, Tong [1 ]
Xia, Siyu [1 ]
Xu, Li [1 ]
Wang, Zhouxiang [1 ]
Ma, Cuiying [1 ]
机构
[1] Xian Univ Sci & Technol, Coll Mat Sci & Engn, Xian 710054, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
AgNbO3; Antiferroelectric stability; Dielectric properties; Energy storage properties; PHASE-TRANSITIONS; DIELECTRIC-PROPERTIES; DENSITY; PERFORMANCE; EVOLUTION;
D O I
10.1016/j.jssc.2022.123081
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
AgNbO3 ceramics have attracted progressively more attention to high power energy storage in dielectric capacitors because of complicated in a series of phase transitions. In this work, Ag1-3xBixNb1-3/5xScxO3 (x = 0, 0.005, 0.01, 0.02) ceramics were synthesized via a solid state reaction method in flowing oxygen. The microstructure, dielectric and energy storage properties of as-prepared samples were systematic characterized to evaluate the potential as high energy storage capacitors. A high recoverable energy storage density (3.65 J/cm(3)) and high efficiency (84.31%) were simultaneously obtained in a modified AgNbO3-based ceramic at 21.5 MV/m. The energy storage performance is improved by the ions doping that effectively interrupt the dipoles arrangement structure and stabilize the disordered antiferroelectric phase in the long-range order. Co-doping of Bi3+ on the A site and Sc3+ on the B-site in AgNbO3 is an effective method to enhance the electric field intensity of field-induced phase transitions from antiferroelectric (AFE) to ferroelectric (FE) phases. The M1-M2 phase transition shifted to a lower temperature with an increase in the Bi/Sc amounts, which suppressed the ferroelectricity and obtained pinched-hysteresis loops in modified AgNbO3 ceramics. These results indicate that Bi/Sc co-doped AgNbO3 ceramics are highly efficient lead-free antiferroelectric materials for prospective application in high-performance energy storage capacitors.
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页数:7
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