DEPENDENCE OF SILICON PIN DIODE ELECTRICAL CHARACTERISTICS ON PROTON FLUENCE

被引：2

作者：

Ceponis, T. ^{[1
]}

Balcytis, A. ^{[1
]}

Dzimidavicius, A. ^{[1
]}

Gaubas, E. ^{[1
]}

Kusakovskij, J. ^{[1
]}

Zilinskas, K. ^{[1
]}

机构：

[1] Vilnius State Univ, Inst Appl Res, LT-10223 Vilnius, Lithuania

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2010年 / 50卷 / 02期

关键词：

radiation defects; Si PIN diodes; capacitance-voltage; current-voltage characteristics;

D O I：

10.3952/lithjphys.50205

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A comparative analysis of capacitance voltage (C-V) and current-voltage (I-V) characteristics dependent on proton irradiation fluence in the range from 7.10(12) to 7.10(14) p/cm(2) has been performed in float zone (FZ) silicon PIN diodes. A delta-shape and triangle profiles of radiation induced defects were formed by irradiation with protons having energy in the range from 2.0 to 2.7 MeV. Temperature-dependent variations of current (I-T) at fixed reverse voltage V(R) enable one to extract the thermal activation parameters. These values are found to be in a quantitative agreement with trap activation parameters measured by DLTS technique. The role of point and extended defects in correlated modifications of C-V and I-V characteristics of the irradiated diodes is discussed.

引用

页码：215 / 223

页数：9