DEPENDENCE OF SILICON PIN DIODE ELECTRICAL CHARACTERISTICS ON PROTON FLUENCE

被引：2
|
作者：
Ceponis, T. [1 ]
Balcytis, A. [1 ]
Dzimidavicius, A. [1 ]
Gaubas, E. [1 ]
Kusakovskij, J. [1 ]
Zilinskas, K. [1 ]
机构：
[1] Vilnius State Univ, Inst Appl Res, LT-10223 Vilnius, Lithuania
来源：
LITHUANIAN JOURNAL OF PHYSICS | 2010年 / 50卷 / 02期
关键词：
radiation defects; Si PIN diodes; capacitance-voltage; current-voltage characteristics;
D O I：
10.3952/lithjphys.50205
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A comparative analysis of capacitance voltage (C-V) and current-voltage (I-V) characteristics dependent on proton irradiation fluence in the range from 7.10(12) to 7.10(14) p/cm(2) has been performed in float zone (FZ) silicon PIN diodes. A delta-shape and triangle profiles of radiation induced defects were formed by irradiation with protons having energy in the range from 2.0 to 2.7 MeV. Temperature-dependent variations of current (I-T) at fixed reverse voltage V(R) enable one to extract the thermal activation parameters. These values are found to be in a quantitative agreement with trap activation parameters measured by DLTS technique. The role of point and extended defects in correlated modifications of C-V and I-V characteristics of the irradiated diodes is discussed.
引用
收藏
页码：215 / 223
页数：9
相关论文
共 38 条
  • [31] Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes
    Kozlovski, V. V.
    Korol'kov, O.
    Davidovskaya, K. S.
    Lebedev, A. A.
    Levinshtein, M. E.
    Slepchuk, N.
    Strel'chuk, A. M.
    Toompuu, J.
    TECHNICAL PHYSICS LETTERS, 2020, 46 (03) : 287 - 289
  • [32] The effect of the type of doping on the electrical characteristics of electrolyte-oxide-silicon sensors: pH sensing and polyelectrolyte adsorption
    Garyfallou, Goulielmos Z.
    de Smet, Louis C. P. M.
    Sudholter, Ernst J. R.
    SENSORS AND ACTUATORS B-CHEMICAL, 2012, 168 : 207 - 213
  • [33] Electrical characteristics and interface states of Au/poly(ethylmethacrylate)/n-InP organic-modified Schottky diode at room temperature
    Padma, R.
    Reddy, V. Rajagopal
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2014, 16 (9-10): : 1131 - 1136
  • [34] Measurement and Analysis of Temperature Dependence for Current-Voltage Characteristics of Homogeneous Emitter and Selective Emitter Crystalline Silicon Solar Cells
    Nam, Yoon Chung
    Park, Hyomin
    Lee, Ji Eun
    Kim, Soo Min
    Do Kim, Young
    Park, Sungeun
    Kang, Yoonmook
    Lee, Hae-Seok
    Kim, Donghwan
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2014, 24 (07): : 375 - 380
  • [35] TCAD simulation of electrical characteristics dependence on metal work function for Schottky Contact-Super Barrier Rectifier (SC-SBR)
    Kwon, Sungkyu
    Cho, Doohyung
    Won, Jongil
    Jung, Dongyun
    Jang, Hyungyu
    Park, Kunsik
    2022 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), 2022,
  • [36] Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height
    Imadate, Hiroyoshi
    Mishima, Tomoyoshi
    Shiojima, Kenji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [37] Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependence
    Latreche, A.
    Ouennoughi, Z.
    Sellai, A.
    Weiss, R.
    Ryssel, H.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (08)
  • [38] Photovoltaic, capacitance-voltage, conductance-voltage, and electrical impedance characteristics of p-type silicon/intrinsic-silicon/n-type semiconducting iron disilicide heterostructures built via facing target direct-current sputtering
    Chaleawpong, Rawiwan
    Promros, Nathaporn
    Charoenyuenyao, Peerasil
    Borwornpornmetee, Nattakorn
    Sittisart, Pattarapol
    Sittimart, Phongsaphak
    Tanaka, Yuki
    Yoshitake, Tsuyoshi
    THIN SOLID FILMS, 2020, 709
1234