Low temperature Ag-Ag direct bonding under air atmosphere

被引:24
作者
Chang, Leh-Ping [1 ]
Huang, Shin-Yi [2 ]
Chang, Tao-Chih [2 ]
Ouyang, Fan-Yi [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan
[2] Ind Technol Res Inst, Hsinchu 300, Taiwan
关键词
Sputtered Ag; Metal bonding; Oxide dissociation; Stress migration; Air atmosphere; INTERMETALLIC COMPOUND; INTERFACIAL REACTION; DIFFUSION; PRESSURE; SYSTEM; CREEP;
D O I
10.1016/j.jallcom.2020.158587
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, sputtered Ag thin films were proposed as bonding materials and Ag-Ag direct bonding processes were achieved by thermo-compression process at 180-200 degrees C under air atmosphere in short periods. Both results of Ag-Ag bonding interface and shear strength exhibited excellent bonding quality, which was attributed to the dissociation behavior of Ag2O at elevated temperature under air atmosphere. The dissociation behavior of Ag2O was further investigated using thermogravimetric analysis (TGA) and the results demonstrated that the dissociation temperature is similar to 175 degrees C. The fast surface diffusivity of Ag and the oxide-less surface facilitated the stress-induced migration of Ag atoms during thermo-compression bonding process. The corresponding bonding mechanism of the Ag-Ag direct bonding processes under air atmosphere was also discussed in details. In addition, the resistance of kelvin structure in test vehicles of Ag-Ag bonded bumps remained unchanged after temperature cycle test for 1000 cycles, demonstrating good reliability of Ag-Ag direct bonding. (C) 2021 Elsevier B.V. All rights reserved.
引用
收藏
页数:8
相关论文
共 37 条
[1]   Lead-free solders in microelectronics [J].
Abtew, M ;
Selvaduray, G .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2000, 27 (5-6) :95-141
[2]   Predicting trends in rate parameters for self-diffusion on FCC metal surfaces [J].
Agrawal, PM ;
Rice, BM ;
Thompson, DL .
SURFACE SCIENCE, 2002, 515 (01) :21-35
[3]   Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms [J].
Aziz, MJ .
APPLIED PHYSICS LETTERS, 1997, 70 (21) :2810-2812
[4]   Microstructure evolution and abnormal grain growth during copper wafer bonding [J].
Chen, KN ;
Fan, A ;
Tan, CS ;
Reif, R ;
Wen, CY .
APPLIED PHYSICS LETTERS, 2002, 81 (20) :3774-3776
[5]  
Gan C.L., 2011, P 2011 IEEE INT INT, P1
[6]  
Gaskell D.R., 2017, INTRO THERMODYNAMICS
[7]  
Hirth JP., 1983, THEORY DISLOCATIONS
[8]   Novel Cu-to-Cu Bonding With Ti Passivation at 180 °C in 3-D Integration [J].
Huang, Yan-Pin ;
Chien, Yu-San ;
Tzeng, Ruoh-Ning ;
Shy, Ming-Shaw ;
Lin, Teu-Hua ;
Chen, Kou-Hua ;
Chiu, Chi-Tsung ;
Chiou, Jin-Chern ;
Chuang, Ching-Te ;
Hwang, Wei ;
Tong, Ho-Ming ;
Chen, Kuan-Neng .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (12) :1551-1553
[9]  
Karakaya I., 1992, Journal of phase equilibria, V13, P137, DOI DOI 10.1007/BF02667476
[10]   Technologies for Printing Sensors and Electronics Over Large Flexible Substrates: A Review [J].
Khan, Saleem ;
Lorenzelli, Leandro ;
Dahiya, Ravinder S. .
IEEE SENSORS JOURNAL, 2015, 15 (06) :3164-3185