A 4-stage Low-Noise Amplifier with 1.52-1.67dB Noise Figure

被引：0

作者：

Mao, Feng-yuan ^{[1
]}

Li, Bin ^{[1
]}

Chen, Zhi-Jian ^{[1
]}

Wu, Zhao-hui ^{[1
]}

Lin, Xiao-Ling ^{[2
]}

机构：

[1] South China Univ Technol, Sch Microelect, Guangzhou 510640, Guangdong, Peoples R China

[2] Sci & Technol Reliabil Phys & Applicat Technol El, Guangzhou 510610, Peoples R China

来源：

2022 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT) | 2022年

关键词：

low-noise amplifier; Gallium Nitride; noise figure; low-Q matching network;

D O I：

10.1109/ICMMT55580.2022.10023404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a 23-27GHz MMIC low-noise amplifier (LNA) using 0.15 mu m Gallium Nitride (GaN) process is proposed. By introducing a 5-element low-Q network between stages, the proposed 4-stage LNA achieves a good balance among bandwidth, noise figure (NF), gain and input return loss. The LNA exhibits a peak gain of 25.2dB and a minimum NF of 1.52dB with a 3-dB bandwidth from 23 to 27GHz. The input return loss and output return loss are better than 10 dB and 15 dB respectively. The LNA MMIC can be powered-up using a +5V DC power supply and it consumes total DC current of 30 mA. The overall chip size is 2.7 x1.8 mm(2).

引用

页数：3

共 8 条

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