Microstructural characterization of antimonide based III-V compounds and their effect on electro-optical properties of substrate materials and devices

被引：0
|
作者：
Dutta, PS [1 ]
Gutmann, RJ [1 ]
Charache, GW [1 ]
Wang, CA [1 ]
机构：
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
来源：
OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS | 2000年 / 588卷
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D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper presents some of the widely used characterization tools for antimonide based III-V compounds, focusing on characterization of defects that limit device operation. The effect of microstructure on the electro-optical properties of GaSb and GaInAsSb important in devices is emphasized.
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页码：187 / 198
页数：12
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