Enhanced Thermoelectric Performance of Bi2Te2.7Se0.3/Bi2S3 Synthesized by Anion Exchange Method

被引：8

作者：

Chen, Xi ^{[1
]}

Cai, Fanggong ^{[1
]}

Liu, Chuanrong ^{[2
]}

Dong, Rong ^{[1
]}

Qiu, Lanxin ^{[1
]}

Jiang, Lili ^{[1
]}

Yuan, Guocai ^{[1
]}

Zhang, Qinyong ^{[1
,2
]}

机构：

[1] Xihua Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Fluid & Power Machinery, Chengdu 610039, Sichuan, Peoples R China

[2] Xihua Univ, Xihua Honors Coll, Chengdu 610039, Sichuan, Peoples R China

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2020年 / 14卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Bi2Te2.7Se0.3; Bi2Te2.7Se0.3/Bi2S3; heterostructures; thermal conductivity; thermoelectric materials; THERMAL-CONDUCTIVITY; PHONON-SCATTERING; NANOCOMPOSITES; CARRIER;

D O I：

10.1002/pssr.201900679

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Decoupling the electric conductivity, Seebeck coefficient, and thermal conductivity is a core issue to improve the properties of thermoelectric materials by tuning the electron and phonon transport properties. Herein, Bi2Te2.7Se0.3/Bi2S3 heterostructure is successfully synthesized by a simple anion exchange method with Bi2Te2.7Se0.3 as the starting material. The Bi2Te2.7Se0.3/Bi2S3 heterointerfaces can achieve an effective phonon scattering and significant decrease in thermal conductivity, while maintaining a high power factor, resulting in an enhanced figure of merit (ZT). By controlling the concentration of Bi2Te2.7Se0.3/Bi2S3 heterointerfaces, the carrier-transporting and phonon-scattering behaviors can be simultaneously optimized. A maximum ZT of 0.7 is obtained at 473 K, which is 23% higher than that of pure Bi2Te2.7Se0.3. In addition, the average ZT at 300-548 K increases from 0.49 to 0.61, which is 25% higher than that of pure Bi2Te2.7Se0.3.

引用

页数：6

共 24 条

[1]

Cai F., 2020, J ALLOY COMPD, V819, P153384

[2] Manipulation of Phonon Transport in Thermoelectrics [J].