A piezoelectric-on-silicon width-extensional mode Lorentz force resonant MEMS magnetometer

被引:14
作者
Ghosh, S. [1 ]
Lee, J. E. -Y. [1 ,2 ]
机构
[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, State Key Lab Millimeter Waves, Kowloon, Hong Kong, Peoples R China
关键词
Magnetic field sensors; Piezoelectric devices; Micromechanical devices; Resonant sensors; MAGNETIC-FIELD SENSOR; SENSITIVITY;
D O I
10.1016/j.sna.2017.04.040
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present a unique micromachined magnetometer based on a width-extensional (WE) mode thin-film piezoelectric-on-silicon (TPoS) resonator for detection of magnetic fields applied normal to the plane of fabrication. The reported device targets operation in ambient pressure rather than vacuum, which should simplify packaging requirements. To compensate for a lower quality (Q) factor when operating in ambient pressure, the strong electromechanical coupling provided by the piezoelectric Aluminium Nitride (AIN) transducer has the advantage of greatly enhancing the sensitivity performance of the device. The reported device is based on a rectangular plate that is driven into the WE resonance mode by an in-plane Lorentz force pair that results from an external out-of-plane magnetic field. Two design generations of the proposed device topology are presented herein, with the latter design generation showing a substantial improvement over the former. The resonant frequency of the most recent design generation is 18 MHz, and its associated Q-factor was 1500 under ambient conditions. We have experimentally calibrated the sensitivity of the device, which was found to be 63.27 mV/T under ambient conditions. The measured result agrees well with both our analytical and finite element model. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:169 / 177
页数:9
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