Investigation the Flow Charge Rate at InAs/D149 and ZnO/D149 System Using Theoretical Quantum Model

被引：2

作者：

Al-agealy, Hadi J. M. ^{[1
]}

Al Janeri, Hazim Hadi Dhaif ^{[2
]}

机构：

[1] Univ Baghdad, Coll Educ Ibn Al Haitham, Dept Phys, Baghdad, Iraq

[2] Minist Educ, Directorate Educ Wasit, Dept Educ Essaouira, Essaouira, Morocco

来源：

TECHNOLOGIES AND MATERIALS FOR RENEWABLE ENERGY, ENVIRONMENT AND SUSTAINABILITY (TMREES19) | 2019年 / 2123卷

关键词：

Flow Charge Rate; System; Quantum Model; ELECTRON-TRANSFER REACTIONS; TRANSFER RATE CONSTANTS; METAL;

D O I：

10.1063/1.5116982

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

In this ongoing study, we investigated a theoretical study of flow charge transfer at semiconductor-liquid interfaces. The quantum method has employed in obtaining the flow rate of InAs and ZnO semiconductors with D149 interface. The both system have maximum flow charge rate with DichIoroethane solvent, the ZnO/D149 has large flow charge rate compare to InAs/D149 system for the same overlapping coupling. Flow charge rate was decreasing with increasing the potential barrier and vice versa for both system and the flow rate increasing eith decreasing the orientation transition energy

引用

页数：6

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