Active pixel sensors for imaging X-ray spectrometers

被引：5

作者：

Holl, P ^{[1
]}

Fischer, P ^{[1
]}

Hartmann, R ^{[1
]}

Hasinger, G ^{[1
]}

Kollmer, J ^{[1
]}

Krause, N ^{[1
]}

Lechner, P ^{[1
]}

Lutz, G ^{[1
]}

Meidinger, N ^{[1
]}

Peric, I ^{[1
]}

Richter, R ^{[1
]}

Soltau, H ^{[1
]}

Strüder, L ^{[1
]}

Treis, J ^{[1
]}

Trümper, J ^{[1
]}

Wermes, N ^{[1
]}

机构：

[1] PNSensor GMBH, D-80803 Munich, Germany

来源：

X-RAY AND GAMMA-RAY TELESCOPES AND INSTRUMENTS FOR ASTRONOMY, PTS 1 AND 2 | 2003年 / 4851卷

关键词：

pixel detectors; CCDs; XEUS; XMM-Newton; drift detectors; X-ray; imaging; spectroscopy;

D O I：

10.1117/12.461356

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

Active Pixel Sensors (APS) offer high-resolution imaging in combination with a fast and flexible readout. The MPI Halbleiterlabor develops and produces DEPFET (Depleted Field Effect Transistor, [1]) based APS devices. They are additionally characterized by enhanced sensitivity for X-ray photons in the range from 0.1 keV to 25 keV, spectroscopic energy resolution (below 1 electron r.m.s.) and radiation hardness. Moreover, the production process on high-ohmic silicon allows incorporating additional high-speed spectrometers based on silicon drift detectors. Such a detector system is proposed as a wide field imager for the XEUS (X-ray Evolving Universe Spectroscopy) mission. XEUS is a planned project within the European Space Agency's Horizon 2000+ program. We will present a focal plane concept for XEUS and measurement results from DEPFET-APS prototypes and high speed drift detectors.

引用

页码：770 / 778

页数：9

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