Dopant dependence on passivation and reactivation of carrier after hydrogenation

被引：12

作者：

Fukata, N.

Sato, S.

Morihiro, H.

Murakami, K.

Ishioka, K.

Kitajima, M.

Hishita, S.

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Mat Sci, Mat Engn Lab, Tsukuba, Ibaraki 3050047, Japan

[3] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 04期

关键词：

D O I：

10.1063/1.2654831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of hydrogen (H)-related complexes and H effects on boron (B) and phosphorus (P) dopants was investigated in B- or P-doped silicon (Si) crystal treated with high concentration of H. The reactivation process of dopant carriers by annealing after hydrogenation was significantly different between the p-type and n-type specimens. The difference is likely to be attributable to the formation of H-related defects based on the stable sites of the H atoms, i.e., complicated H multiple trapping centers are formed by bond breaking due to H atoms in only p-type B-doped Si.

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页数：3

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