Coupled self-assembled monolayer for enhancement of Cu diffusion barrier and adhesion properties

被引:25
作者
Chung, Yongwon [1 ]
Lee, Sanggeun [1 ]
Mahata, Chandreswar [1 ]
Seo, Jungmok [1 ]
Lim, Seung-Min [2 ]
Jeong, Min-su [3 ]
Jung, Hanearl [4 ]
Joo, Young-Chang [2 ]
Park, Young-Bae [3 ]
Kim, Hyungjun [4 ]
Lee, Taeyoon [1 ]
机构
[1] Yonsei Univ, Sch Elect & Elect Engn, Nanobio Device Lab, Seoul 120749, South Korea
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Nanodevice Mat Lab, Seoul 151744, South Korea
[3] Andong Natl Univ, Sch Mat Sci & Engn, Andong Si 760749, Gyeongsangbuk D, South Korea
[4] Yonsei Univ, Sch Elect & Elect Engn, Nanodevice Lab, Seoul 120749, South Korea
关键词
CARBON NANOTUBES; GOLD SURFACES; COPPER; SILICON; FILMS; METALLIZATION; THICKNESS; BINDING; LAYER; CIRCUITS;
D O I
10.1039/c4ra08134j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this work, we have demonstrated chemically coupled (3-aminopropyl) trimethoxysilane (APTMS) and 3-mercaptopropionic acid (MPA) self-assembled monolayers (SAMs) to enhance the diffusion barrier properties against copper (Cu) as well as the adhesion properties towards SiO2 and Cu electrode. The coupled-SAM (C-SAM) can attach to both Cu and SiO2 strongly which is expected to enhance both the diffusion barrier and adhesion properties. A carbodiimide-mediated amidation process was used to link NH2 terminated APTMS to COOH terminated MPA. The resulting C-SAM shows a low root-mean-square roughness of 0.44 nm and a thickness of 2 nm. Time-dependent dielectric breakdown (TDDB) tests are used to evaluate APTMS and C-SAM for their ability to block Cu ion diffusion. The average time-to-failure (TTF) is enhanced over 4 times after the MPA attachment, and is even comparable to TaN barriers. Capacitance-voltage (C-V) measurements are also conducted to monitor Cu ion diffusion. Negligible change in the flatband voltage and C-V curve is observed during the constant voltage stress C-V measurement. Enhancement of the adhesion properties are measured using four-point bending tests and shows that the C-SAM has a 33% enhancement in the adhesion properties between SiO2 and Cu compared to APTMS. The C-SAM shows potential as an ultra-thin Cu diffusion barrier which also has good adhesion properties.
引用
收藏
页码:60123 / 60130
页数:8
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