Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

被引：4

作者：

Chen, Z. X. ^{[1
]}

Li, X. ^{[2
]}

Li, W. -M. ^{[2
,3
]}

Lo, G. -Q. ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, 11 Sci Pk Rd,Singapore Sci Pk 2, Singapore 117685, Singapore

[2] Picosun Asia Pte Ltd, 1 North Bridge Rd,12-01 High St Ctr, Singapore 179094, Singapore

[3] Picosun Oy, Masalantie 365, Masala 02430, Finland

来源：

2015 2ND INTERNATIONAL CONFERENCE ON CHEMICAL AND MATERIAL ENGINEERING (ICCME 2015) | 2016年 / 39卷

关键词：

D O I：

10.1051/matecconf/20163901010

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

This paper presents the plasma-enhanced atomic layer deposition (PEALD) of titanium nitride (TiN) using the organic precursor tetrakis(ethylmethylamido)titanium (TEMAT), with remote ammonia (NH3) plasma as reactant gas. This work investigates the impact of substrate temperature, from 150-350 degrees C, and plasma times, from 5-30s, on deposition rate, resistivity, carbon content, N/Ti ratio and film density. The lowest resistivity of similar to 250 mu Omega. cm was achieved at substrate temperatures 300-350 degrees C and plasma time of 20s. At low substrate temperatures, although deposition was possible, carbon concentration was found to be higher, which thus affects film resistivity and density.

引用

页数：3

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