Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology

被引：31

作者：

Huang, L. D. ^{[1
]}

Wu, J. Y. ^{[2
]}

Wang, J. P. ^{[1
]}

Tsai, C. M. ^{[1
]}

Huang, Y. H. ^{[1
]}

Wu, D. R. ^{[1
]}

Lin, S. D. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, 1001 Univ Rd, Hsinchu 300, Taiwan

[2] Ind Technol Res Inst, Informat & Commun Res Labs, Hsinchu 310, Taiwan

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 12期

关键词：

TIME; NM; PHOTODIODE; RESOLUTION; DETECTOR; ARRAY; SPAD;

D O I：

10.1364/OE.25.013333

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-mu m high-voltage CMOS technology. Without any technology customization. the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications. (C) 2017 Optical Society of America

引用

页码：13333 / 13339

页数：7

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