High-quality epitaxial Pr2-xCexCuO4-y thin films were fabricated by pulsed laser deposition using N2O reactive gas. The deposition parameters for the films were optimized for each of the 11 investigated Ce concentrations. The optimized thin films show sharp superconducting transitions in AC magnetic susceptibility and electrical resistivity. We find that Ce can be incorporated up to a concentration of x = 0.23 without appearance of impurity phases. We also present and discuss the structural and superconducting properties of our films after a high-temperature post-annealing treatment claimed by Brinkmann et al. to reduce Pr2-xCexCuO4-y single crystals more effectively. We did not observe bulk superconductivity in films with x less than or equal to 0.10 under any annealing conditions. (C) 1998 Elsevier Science B.V.
机构:
Indian Inst Technol Madras, Dept Elect Engn, Microelect & MEMS Lab, Chennai 600036, Tamil Nadu, IndiaLovely Profess Univ, Dept Phys, Phagwara 144411, Punjab, India
DasGupta, Nandita
Rao, M. S. Ramachandra
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Indian Inst Technol Madras, Nano Funct Mat Technol Ctr, Dept Phys, Chennai 600036, Tamil Nadu, India
Indian Inst Technol Madras, Mat Sci Res Ctr, Chennai 600036, Tamil Nadu, IndiaLovely Profess Univ, Dept Phys, Phagwara 144411, Punjab, India
机构:
College of Materials Science and Engineering, Sichuan University, Chengdu,610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu,610064, China
Liu, Bo
Luo, Run
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College of Materials Science and Engineering, Sichuan University, Chengdu,610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu,610064, China
Luo, Run
Li, Bing
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College of Materials Science and Engineering, Sichuan University, Chengdu,610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu,610064, China
Li, Bing
Zhang, Jingquan
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College of Materials Science and Engineering, Sichuan University, Chengdu,610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu,610064, China
Zhang, Jingquan
Li, Wei
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College of Materials Science and Engineering, Sichuan University, Chengdu,610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu,610064, China
Li, Wei
Wu, Lili
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College of Materials Science and Engineering, Sichuan University, Chengdu,610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu,610064, China
Wu, Lili
Feng, Lianghuan
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College of Materials Science and Engineering, Sichuan University, Chengdu,610064, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu,610064, China
Feng, Lianghuan
Wu, Judy
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Department of Physics and Astronomy, University of Kansas, Lawrence,KS,66046, United StatesCollege of Materials Science and Engineering, Sichuan University, Chengdu,610064, China
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Liu, J.
Wang, Y.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Wang, Y.
Dai, J. Y.
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
机构:
Tokyo Inst Technol, Lab Zero Carbon Energy, Ookayama, Tokyo 1528550, Japan
Tokyo Inst Technol, Lab Mat & Struct, Yokohama, Kanagawa 2268502, JapanTohoku Univ, Sch Engn, Dept Appl Chem, Sendai, Miyagi 9808579, Japan
机构:
Tokyo Inst Technol, Dept Appl Chem, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Appl Chem, Meguro Ku, Tokyo 1528552, Japan
Niwa, Mifuyu
Ohtomo, Akira
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Tokyo Inst Technol, Dept Appl Chem, Meguro Ku, Tokyo 1528552, Japan
Tokyo Inst Technol, Mat Res Ctr Element Strategy MCES, Midori Ku, Yokohama, Kanagawa 2268503, JapanTokyo Inst Technol, Dept Appl Chem, Meguro Ku, Tokyo 1528552, Japan