Effects of O2 plasma pre-treatment on ZnO thin films grown on polyethersulfone substrates at various deposition temperatures by atomic layer deposition

被引：14

作者：

Lee, J. Y. ^{[1
]}

Shin, C. M. ^{[1
]}

Heo, J. H. ^{[1
]}

Kim, C. R. ^{[1
]}

Park, J. H. ^{[1
]}

Lee, T. M. ^{[1
]}

Ryu, H. ^{[1
]}

Son, C. S. ^{[2
]}

Shin, B. C. ^{[3
]}

Lee, W. J. ^{[3
]}

机构：

[1] Inje Univ, Dept Nano Syst Engn, Gimhae 621749, South Korea

[2] Silla Univ, Dept Elect Mat Engn, Pusan 617736, South Korea

[3] Dong Eui Univ, Dept Nano Engn, Pusan 614714, South Korea

来源：

CURRENT APPLIED PHYSICS | 2010年 / 10卷

关键词：

Atomic layer deposition; Zinc oxide; Flexible substrate; TRANSPARENT; EPITAXY; DEVICES;

D O I：

10.1016/j.cap.2009.07.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films were deposited on polyethersulfone (PES) substrates by atomic layer deposition (ALD) We investigated the effects of O-2 plasma substrate pre-treatment power for various deposition temperatures from 100 degrees C to 250 degrees C X-ray diffraction (XRD) measurements revealed that the ZnO thin films prefer c-axis orientation when the deposition temperature is increased in addition, the structural properties of ZnO thin films varied with plasma pre-treatment power (C) 2009 Elsevier B.V. All rights reserved

引用

页码：S290 / S293

页数：4

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