Sub-nanosecond microchip laser with intracavity Raman conversion

被引：44

作者：

Demidovich, AA

Apanasevich, PA

Batay, LE

Grabtchikov, AS

Kuzmin, AN

Lisinetskii, VA

Orlovich, VA

Kuzmin, OV

Hait, VL

Kiefer, W

Danailov, MB

机构：

[1] Natl Acad Sci Belarus, Inst Atom & Mol Phys, Minsk 220072, BELARUS

[2] Natl Acad Sci Belarus, BI Stepanov Phys Inst, Minsk 220072, BELARUS

[3] STC FIRN, Krasnodar 350058, Russia

[4] Univ Wurzburg, Inst Phys Chem, D-97074 Wurzburg, Germany

[5] Sincrotrone Trieste, Laser Lab, I-34012 Trieste, Italy

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2003年 / 76卷 / 05期

关键词：

D O I：

10.1007/s00340-003-1149-z

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Efficient sub-nanosecond pulse operation of microchip lasers with intracavity Raman conversion and pulse compression is presented for the first time. The microchip lasers were composed of Nd:LSB or Nd:YAG laser crystals, Cr4+:YAG saturable absorber, and Ba(NO3)(2) Raman medium. The pulse duration obtained at the Stokes wavelength (1196 nm) was as short as 118 ps. Optical conversion efficiency of laser-diode pump power to the Stokes power of 8% was reached. Pulse energy and peak power of Stokes emission were 1.2 muJ and 5.4 kW, correspondingly. Numerical calculations are in good agreement with obtained experimental results.

引用

页码：509 / 514

页数：6

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