Strain relaxation in epitaxial (Pb,Sr)TiO3 thin films on NdGaO3 substrates

被引：18
|
作者：
Lin, Y. [1 ]
Dai, C. [1 ]
Li, Y. R. [1 ]
Chen, X. [2 ,3 ]
Chen, C. L. [2 ,3 ,4 ]
Bhalla, A. [5 ]
Jia, Q. X. [6 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
[2] Univ Houston, Dept Phys, Houston, TX 77204 USA
[3] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
[4] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA
[5] Univ Texas San Antonio, Dept Elect & Comp Engn, San Antonio, TX 78249 USA
[6] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 10期
基金：
中国国家自然科学基金;
关键词：
ANISOTROPIC INPLANE STRAINS; DIELECTRIC-PROPERTIES; FERROELECTRICITY; ENHANCEMENT;
D O I：
10.1063/1.3357435
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strain relaxation behavior of (Pb,Sr)TiO3 thin films on (110)NdGaO3 substrates fabricated under different conditions have been investigated using high resolution x-ray diffraction. Dislocation densities and interfacial strain distribution have been systematically studied with samples in different postdeposition cooling rates. Strain relaxation and dislocation evolution are found to be dependent upon the cooling process. The relationship of dielectric properties and the strain and dislocations of the films were discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3357435]
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页数：3
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