Electrical conduction and photoluminescence properties of solution-grown ZnO nanowires

被引:20
作者
Jones, Frank [1 ]
Leonard, Francois
Talin, A. Alec
Bell, Nelson S.
机构
[1] Sandia Natl Labs, Livermore, CA 94551 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
D O I
10.1063/1.2751116
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the optical and electrical properties of zinc oxide nanorods synthesized in solution using Oswald ripening of ZnO nanodots with the addition of ethylenediamene growth directing agent. This method results in high quality, single crystalline ZnO nanorods that extend up to 3 mu m in length and have an average diameter of 25 +/- 7 nm, compared to similar to 75 nm diameter for similarly prepared nanorods but without the addition of the growth directing agent. Furthermore, we find that the higher aspect ratio nanorods exhibit strong size-dependent electrical characteristics, with a critical diameter of about 27 nm delimiting nonconductive and conductive behaviors. Theoretical calculations indicate that the origin of this size-dependent conductivity is the presence of surface states that deplete the carriers in the smaller diameter nanorods, and an estimate of the density of these states is provided. (c) 2007 American Institute of Physics.
引用
收藏
页数:7
相关论文
共 33 条
[1]   Size-dependent photoconductivity in MBE-grown GaN-nanowires [J].
Calarco, R ;
Marso, M ;
Richter, T ;
Aykanat, AI ;
Meijers, R ;
Hart, AV ;
Stoica, T ;
Luth, H .
NANO LETTERS, 2005, 5 (05) :981-984
[2]   Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors [J].
Cha, HY ;
Wu, HQ ;
Chandrashekhar, M ;
Choi, YC ;
Chae, S ;
Koley, G ;
Spencer, MG .
NANOTECHNOLOGY, 2006, 17 (05) :1264-1271
[3]   Controlled formation of individually seeded, electrically addressable silicon nanowire arrays for device integration [J].
Chang, Ying-Lan ;
Yi, Sung Soo ;
Chow, Edmond ;
Girolami, Grant ;
Young, Yim ;
Liu, Maozi ;
Albuschies, Jorg ;
Amano, Jun .
APPLIED PHYSICS LETTERS, 2006, 89 (22)
[4]  
CHENG B, CHEM COMMUN CAMBRIDG, V2004, P986
[5]   Low-temperature wafer-scale production of ZnO nanowire arrays [J].
Greene, LE ;
Law, M ;
Goldberger, J ;
Kim, F ;
Johnson, JC ;
Zhang, YF ;
Saykally, RJ ;
Yang, PD .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (26) :3031-3034
[6]   Quantum confinement in ZnO nanorods [J].
Gu, Y ;
Kuskovsky, IL ;
Yin, M ;
O'Brien, S ;
Neumark, GF .
APPLIED PHYSICS LETTERS, 2004, 85 (17) :3833-3835
[7]   Chemical surface passivation of Ge nanowires [J].
Hanrath, T ;
Korgel, BA .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (47) :15466-15472
[8]   Rectifying behavior of electrically aligned ZnO nanorods [J].
Harnack, O ;
Pacholski, C ;
Weller, H ;
Yasuda, A ;
Wessels, JM .
NANO LETTERS, 2003, 3 (08) :1097-1101
[9]   Depletion-mode ZnO nanowire field-effect transistor [J].
Heo, YW ;
Tien, LC ;
Kwon, Y ;
Norton, DP ;
Pearton, SJ ;
Kang, BS ;
Ren, F .
APPLIED PHYSICS LETTERS, 2004, 85 (12) :2274-2276
[10]   Luminescent properties of solution-grown ZnO nanorods [J].
Hsu, J. W. P. ;
Tallant, D. R. ;
Simpson, R. L. ;
Missert, N. A. ;
Copeland, R. G. .
APPLIED PHYSICS LETTERS, 2006, 88 (25)