Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer

被引：5
作者：
Zhang, ZY
Yang, CL
Wei, YQ
Ye, XL
Jin, P
Li, CM
Meng, XQ
Xu, B
Wang, ZG
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chalmers Univ Technol, Dept Microelect, Photon Lab, SE-41296 Gothenburg, Sweden
[3] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2003年 / 126卷 / 07期
基金：
中国国家自然科学基金;
关键词：
nanostructures; semiconductors; optical properties;
D O I：
10.1016/S0038-1098(03)00186-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL integrated intensity ratio of the first excited state to the ground state for InAs QDs unexpectedly decreases with increasing temperature, which we attribute to the phonon bottleneck effect. We believe that these experimental results are closely related to the partially coupled quantum dots system and the large energy separation between the ground and the first excited states. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：391 / 394
页数：4
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