Electric properties of 0.2Pb(Mg1/3Nb2/3)O3-0.8Pb(Zr0.475Ti0.525)O3 thick film fabricated by electrophoresis deposition

被引：1

作者：

Jeong, Soon-Jong ^{[1
]}

Kim, Min-Soo ^{[1
]}

Kim, In-Sung ^{[1
]}

Cho, Kyung-Ho ^{[2
]}

机构：

[1] Korea Electrotechnol Res Inst, Chang Won 641120, South Korea

[2] Agcy Def Dev, Taejon, South Korea

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2010年 / 118卷 / 1376期

关键词：

Piezoelectric; Piezoelectric thick film; Electrophoretic deposition; Thickness dependence of ferroelectric properties; PIEZOELECTRIC PROPERTIES; PZT; TEMPERATURE;

D O I：

10.2109/jcersj2.118.283

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This study presents dielectric and piezoelectric properties of piezoelectric thick film processed by electrophoresis deposition method. 1 mu m-200 mu m-thick film were fabricated by electrophoresis depostion method. The dielectric constant and piezoelectric property of the piezoelectric film increased as the film become thicker. When electric field <3 kV/mm was applied, their dielectric and piezoelectric properties were changed with respect to their thickness. At electric field = 5 kV/mm their properties are constant regardless of their thickness. These changes can be explained by existence of many void defects to be inevitabley introduced in thick film fabrication process, which can be one of crucial causes of controlling ferrroelectric properties of thick films. (C) 2010 The Ceramic Society of Japan All rights reserved

引用

页码：283 / 290

页数：8

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