Electronic properties of Si hollow nanowires

被引：2

作者：

Di Mario, Lorenzo ^{[1
]}

Turchini, Stefano ^{[2
]}

Zema, Nicola ^{[2
]}

Cimino, Roberto ^{[3
]}

Martelli, Faustino ^{[1
]}

机构：

[1] CNR, IMM, I-00133 Rome, Italy

[2] CNR, ISM, I-00133 Rome, Italy

[3] Ist Nazl Fis Nucl, LNF, I-00044 Frascati, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 17期

关键词：

SILICON NANOWIRES; NANOTUBES; TEMPLATES; TRANSPORT;

D O I：

10.1063/1.4901200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic and structural properties of amorphous and crystalline silicon hollow nanowires (HNWs) have been investigated by X-ray photoemission (XPS), Raman, and photoluminescence spectroscopies. The HNWs have an internal diameter of about 80 nm and sidewalls with a thickness of 8-15 nm. Crystalline HNWs are obtained by thermal annealing of the amorphous ones. XPS shows that although oxidation is a very important process in these suspended nanostructures, a clear Si 2p signal is detected in the crystalline HNWS, thus indicating that the sidewall surface maintains mainly a pure silicon nature. Raman shows that the thermal annealing gives rise to a very good crystal quality and a weak visible luminescence signal is detected in the crystalline HNWs. (C) 2014 AIP Publishing LLC.

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页数：5

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