The Method of Prevent Footing Effect in Making SOI Micro-mechanical Structure

被引:4
作者
Mao, Xu [1 ]
Yang, Zhenchuan [1 ]
Li, Zhihong [1 ]
Yan, Guizhen [1 ]
机构
[1] Peking Univ, Inst Microelect, Natl Key Lab Micro Nano Fabricat Technol, Beijing 100871, Peoples R China
来源
2009 4TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1 AND 2 | 2009年
关键词
footing effect; SOI process; thin Al film; micro-accelerometer; MEMS GYROSCOPE;
D O I
10.1109/NEMS.2009.5068629
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel method to apply thin metal film for preventing footing effect in making micro-mechanical structure on SOI wafer is presented. The handle wafer of the SOI wafer was etched to form cavity by KOH solution, and followed by removing the buried oxide from backside. Then a thin aluminum film was sputtered in the cavity to prevent footing effect. The experimental results showed that the SOI micro-mechanical structure was well protected from footing effect. We applied this method to make the SOI micro-accelerometer, and the linearity, sensitivity, resolution and bandwidth of the SOI micro-accelerometer were measured respectively. The performances of the fabricated SOI micro-accelerometer indicated that the method can improve the fabrication capability of SOI process.
引用
收藏
页码:506 / 509
页数:4
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