Superradiance in electrically pumped semiconductor laser: Myth or reality?

被引：0
|
作者：
Boiko, D. L. [1 ]
Zeng, X. [1 ]
Stadelmann, T. [1 ]
Grossmann, S. [1 ]
Hoogerwerf, A. C. [1 ]
机构：
[1] CSEM, Jaquet Droz 1, CH-2002 Neuchatel, Switzerland
来源：
2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014) | 2014年
关键词：
D O I：
10.1109/ISLC.2014.21
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We analyze transition from amplified spontaneous emission to Q-switched lasing in InGaN laser with absorber. We find narrow region that requires us to evoke cooperative recombination of two electron-hole pairs in X or Pi configuration.
引用
收藏
页码：221 / 222
页数：2
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