N Doped ZnO and ZnO Nanorods based p-n Homojunction Fabricated by Ion Implantation

被引：2

作者：

Chakraborty, Mohua ^{[1
]}

Thangavel, R. ^{[1
]}

Asokan, K. ^{[2
]}

机构：

[1] Indian Sch Mines, Indian Inst Technol, Dept Appl Phys, Solar Energy Res Lab, Dhanbad 826004, Bihar, India

[2] Inter Univ Accelerator Ctr, Mat Sci Div, New Delhi 110067, India

来源：

2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2017) | 2018年 / 1953卷

关键词：

p-n homojunction; ZnO; implantation; structural; optical; ARRAYS;

D O I：

10.1063/1.5032702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen (N) doped and undoped Zinc Oxide (ZnO) nanorod p-n homojunctions were fabricated by ion implantation method. The structural and optical characterizations showed that the N atoms doped into the ZnO crystal lattice. The UV-Vis absorption spectra revealed shift in optical absorption edge towards higher wavelength with ion implantation on ZnO, which attributed N acceptor levels above the valence band. The current-voltage (I-V) measurements exhibit a typical semiconductor rectification characteristic indicating the electrical conductivity of the N-doped ZnO nanorod have p-type conductivity. Moreover, a high photocurrent response has been observed with these p-n homojunctions.

引用

页数：4

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