N Doped ZnO and ZnO Nanorods based p-n Homojunction Fabricated by Ion Implantation

被引：2
|
作者：
Chakraborty, Mohua [1 ]
Thangavel, R. [1 ]
Asokan, K. [2 ]
机构：
[1] Indian Sch Mines, Indian Inst Technol, Dept Appl Phys, Solar Energy Res Lab, Dhanbad 826004, Bihar, India
[2] Inter Univ Accelerator Ctr, Mat Sci Div, New Delhi 110067, India
来源：
2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2017) | 2018年 / 1953卷
关键词：
p-n homojunction; ZnO; implantation; structural; optical; ARRAYS;
D O I：
10.1063/1.5032702
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nitrogen (N) doped and undoped Zinc Oxide (ZnO) nanorod p-n homojunctions were fabricated by ion implantation method. The structural and optical characterizations showed that the N atoms doped into the ZnO crystal lattice. The UV-Vis absorption spectra revealed shift in optical absorption edge towards higher wavelength with ion implantation on ZnO, which attributed N acceptor levels above the valence band. The current-voltage (I-V) measurements exhibit a typical semiconductor rectification characteristic indicating the electrical conductivity of the N-doped ZnO nanorod have p-type conductivity. Moreover, a high photocurrent response has been observed with these p-n homojunctions.
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页数：4
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