Improved microwave performance on low-resistivity Si substrates by Si+ ion implantation

被引：7

作者：

Chen, PQ ^{[1
]}

Chan, YJ ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2000年 / 48卷 / 09期

关键词：

D O I：

10.1109/22.869012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microwave characteristics of spiral inductors on low-resistivity Si substrates have been improved by implanting Si-28(+), ions. Spiral inductors fabricated on these implanted substrates demonstrate better Q-value and microwave performance. The Q-value of inductor enhanced 60% on the implanted substrates than that of low-resistivity Si substrates. An equivalent circuit model of inductor has been evaluated to discuss the effect of substrate loss.

引用

页码：1582 / 1585

页数：4

共 8 条

[1] Microwave inductors and capacitors in standard multilevel interconnect silicon technology [J].