Liquid phase chemical-enhanced oxidation for GaAs operated near room temperature

被引：51

作者：

Wang, HH ^{[1
]}

Huang, CJ ^{[1
]}

Wang, YH ^{[1
]}

Houng, MP ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 1AB期

关键词：

liquid phase oxidation; compound semiconductor GaAs; XPS;

D O I：

10.1143/JJAP.37.L67

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new chemical enhanced oxidation method for gallium arsenide (GaAs) in liquid phase near room temperature (40 degrees C-70 degrees C) is proposed and investigated. Featureless oxide layers with good uniformity and reliability can be grown efficiently on GaAs without any extra energy source. A relatively high oxidation rate (similar or equal to 1000 Angstrom/h), about 50 times higher than that obtained during oxidation in boiling water has been realized. Based on the results of X-ray photoelectron spectroscopy(XPS), excellent chemical stability after thermal annealing as well as good chemical stoichiometry have been realized. The oxide was determined to be composed of Ga2O3 and As2O3.

引用

页码：L67 / L70

页数：4

共 18 条

[1] HIGH-PRESSURE THERMAL-OXIDATION OF N-GAAS IN AN ATMOSPHERE OF OXYGEN AND WATER-VAPOR [J].

BASU, N ;

BHAT, KN .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) :5500-5506

[2] DETECTION OF A NEW POLYMERIC SPECIES FORMED THROUGH THE HYDROLYSIS OF GALLIUM(III) SALT-SOLUTIONS [J].

BRADLEY, SM ;

KYDD, RA ;

YAMDAGNI, R .

JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, 1990, (02) :413-417

[3] MECHANISM OF GAAS ANODIZATION [J].

COLEMAN, DJ ;

SHAW, DW ;

DOBROTT, RD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :239-241

[4] PHOTON-ASSISTED OXIDATION OF THE GAAS(100) SURFACE USING WATER AT 90 K [J].

ETTEDGUI, E ;

PARK, KT ;

CAO, JM ;

GAO, Y ;

RUCKMAN, MW .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) :5411-5417

[5]

GHANDHI S, 1994, VLSI FABRICATION PRI, pCH7

[6] X-RAY PHOTOELECTRON SPECTROSCOPIC ANALYSIS OF THE OXIDE OF GAAS [J].

ISHIKAWA, T ;

IKOMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12A) :3981-3987

[7]

KING RB, 1994, ENCY INORGANIC CHEM, V1

[8] OXIDE PASSIVATION OF PHOTOCHEMICALLY UNPINNED GAAS [J].

KIRCHNER, PD ;

WARREN, AC ;

WOODALL, JM ;

WILMSEN, CW ;

WRIGHT, SL ;

BAKER, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (07) :1822-1824

[9]

LIDE DR, 1997, CRC HDB CHEM PHYSICS, V78, pCH4

[10] THERMAL OXIDATION OF GAAS [J].

MURARKA, SP .

APPLIED PHYSICS LETTERS, 1975, 26 (04) :180-181

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