Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

被引：9

作者：

Firek, Piotr ^{[1
]}

Waskiewicz, Michal ^{[1
]}

Stonio, Bartlomiej ^{[1
]}

Szmidt, Jan ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, Koszykowa 75, PL-00662 Warsaw, Poland

来源：

MATERIALS SCIENCE-POLAND | 2015年 / 33卷 / 04期

关键词：

ISFET/MISFET technology; AlN; aluminum nitride; magnetron sputtering;

D O I：

10.1515/msp-2015-0095

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work presents the investigations of AlN thin films deposited on Si substrates by means of magnetron sputtering. Nine different sputtering processes were performed. Based on obtained results, the tenth process was prepared and performed (for future ISFET structures manufacturing). Round aluminum (Al) electrodes were evaporated on the top of deposited layers. The MIS capacitor structures enabled a subsequent electrical characterization of the AlN films by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Based on these results, the main parameters of investigated layers were obtained. Moreover, the paper describes the technology of fabrication and electrical characterization of ISFET transistors and possibility of their application as ion sensors.

引用

页码：669 / 676

页数：8

共 12 条

[1] The electrical properties of MIS capacitors with ALN gate dielectrics [J].