The characterization of electroless Ni bump for the flip chip

被引：0
|
作者：
Lee, CY [1 ]
Lee, CB [1 ]
Jung, SB [1 ]
Shur, CC [1 ]
机构：
[1] Sung Kyun Kwan Univ, Sch Met & Mat Engn, Jangun Ku, Suwon 440746, South Korea
来源：
METASTABLE, MECHANICALLY ALLOYED AND NANOCRYSTALLINE MATERIALS | 2003年
关键词：
electroless Ni bump; flip chip; UBM; zincating;
D O I：
暂无
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
In the present work, the flip chip bumping process:by electroless Ni for UBM was investigated. The chip used in this experiment has an array of pad 14 x 14 and the pad's size is 100 x 100 mum. Through the result of zincates as pretreatment of Al, it was shown that the second zincating process produced a dense continuous zincating layer compared to first zincating. The deposited Ni bump was identified by XRD as amorphous structure composed of Ni-P (about 12wt% Phosphorous) and crystallized at 594K to Ni and Ni3P.
引用
收藏
页码：439 / 444
页数：6
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