Nucleation and growth of InN thin films using conventional and pulsed MOVPE

被引：49

作者：

Johnson, MC

Konsek, SL

Zettl, A

Bourret-Courchesne, ED

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Ctr Adv Mat, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

nucleation; photoluminescence; scanning electron microscopy; metalorganic chemical vapor deposition; indium nitride (InN); nitrides;

D O I：

10.1016/j.jcrysgro.2004.08.057

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InN was deposited on c-sapphire and GaN substrates using conventional and pulsed metalorganic vapor-phase epitaxy. The nucleation and evolution of thin film growth was investigated. Growth temperature, V/III molar ratio, and substrate material were varied for the two different growth modes (conventional vs. pulsed MOCVD). It was found that InN deposition was sensitive to V/III molar ratio and growth temperature. Photoluminescence results show a peak emission at 0.83 eV. Results are presented that show the highest quality InN was deposited using pulsed metalorganic vapor-phase Epitaxy on GaN substrates. (C) 2004 Published by Elsevier B.V.

引用

页码：400 / 406

页数：7

共 24 条

[1] Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition [J].

Ambacher, O ;

Brandt, MS ;

Dimitrov, R ;

Metzger, T ;

Stutzmann, M ;

Fischer, RA ;

Miehr, A ;

Bergmaier, A ;

Dollinger, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :3532-3542

[2] Ensemble Monte Carlo study of electron transport in wurtzite InN [J].

Bellotti, E ;

Doshi, BK ;

Brennan, KF ;

Albrecht, JD ;

Ruden, PP .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :916-923

[3] High temperature growth of InN on GaP(111)B substrate using a new two-step growth method [J].

Bhuiyan, AG ;

Yamamoto, A ;

Hashimoto, A ;

Ito, Y .

JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) :59-65

[4] LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF INN ON SI(100) [J].

BU, Y ;

MA, L ;

LIN, MC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1993, 11 (06) :2931-2937

[5]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO

[6]

2-O

[7] High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition [J].

Fareed, RSQ ;

Jain, R ;

Gaska, R ;

Shur, MS ;

Wu, J ;

Walukiewicz, W ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2004, 84 (11) :1892-1894

[8] Transient electron transport in wurtzite GaN, InN, and AlN [J].

Foutz, BE ;

O'Leary, SK ;

Shur, MS ;

Eastman, LF .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) :7727-7734

[9] Effect of GaN buffer layer on crystallinity of InN grown on (111)GaAs [J].

Guo, QX ;

Okada, A ;

Kidera, H ;

Tanaka, T ;

Nishio, M ;

Ogawa, H .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) :1032-1036

[10] EPITAXIAL-GROWTH OF INN BY HALOGEN TRANSPORT METHOD [J].

IGARASHI, O .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9A) :2665-2668

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