Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

被引:20
作者
Sudharsanan, S. [1 ]
Karmalkar, Shreepad [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
关键词
aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; sapphire; semiconductor device models; silicon compounds; tunnelling; wide band gap semiconductors; HEMTS;
D O I
10.1063/1.3340826
中图分类号
O59 [应用物理学];
学科分类号
摘要
The high gate leakage of AlGaN/GaN HEMTs grown on sapphire/SiC substrates having x=0.2, AlGaN thickness of 30 nm, and zero drain-source bias was earlier explained using the thermionic trap-assisted tunneling model. In the present work, we show that the same model can explain the gate leakage in AlGaN/GaN HEMTs grown on silicon substrates, having aluminum compositions of 24%, 26%, and 31%, AlGaN thickness of 20 nm, and drain-source bias (V(DS)) of 10 V, over the gate-source voltages above threshold.
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页数:3
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