Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

被引：20

作者：

Sudharsanan, S. ^{[1
]}

Karmalkar, Shreepad ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 06期

关键词：

aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; sapphire; semiconductor device models; silicon compounds; tunnelling; wide band gap semiconductors; HEMTS;

D O I：

10.1063/1.3340826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The high gate leakage of AlGaN/GaN HEMTs grown on sapphire/SiC substrates having x=0.2, AlGaN thickness of 30 nm, and zero drain-source bias was earlier explained using the thermionic trap-assisted tunneling model. In the present work, we show that the same model can explain the gate leakage in AlGaN/GaN HEMTs grown on silicon substrates, having aluminum compositions of 24%, 26%, and 31%, AlGaN thickness of 20 nm, and drain-source bias (V(DS)) of 10 V, over the gate-source voltages above threshold.

引用

页数：3

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