Schottky gate control of photoluminescence from InGaAs quantum wells and ridge quantum-wires

被引：0
|
作者：
Chao, J [1 ]
Kasai, S
Hasegawa, H
机构：
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan
来源：
2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gate-control characteristics of photoluminescence (PL) were investigated for InGaAs quantum well (QW) and ridge quantum wire (QWR) structures grown by molecular beam epitaxy (MBE). Semi-transparent Au Schottky gates were formed on sample surfaces. Large modulations of PL intensity were seen for both QWR and QWs with different gate-voltage dependence. The results were explained in terms of electric field sweeping of photo-generated carriers.
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页码：429 / 432
页数：4
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