Crystal growth and scintillation properties of pure and Tl-doped Cs3Cu2I5

被引:56
作者
Stand, Luis [1 ]
Rutstrom, Daniel [1 ,2 ]
Koschan, Merry [1 ]
Du, Mao-Hua [3 ]
Melcher, Charles [1 ,2 ]
Shirwadkar, Urmila [4 ]
Glodo, Jarek [4 ]
Van Loef, Edgar [4 ]
Shah, Kanai [4 ]
Zhuravleva, Mariya [1 ,2 ]
机构
[1] Univ Tennessee, Scinitillat Mat Res Ctr, Knoxville, TN USA
[2] Univ Tennessee, Dept Mat Sci, Knoxville, TN USA
[3] Oak Ridge Natl Lab, Mat Sci Div, Oak Ridge, TN USA
[4] Radiat Monitoring Devices, Watertown, MA USA
关键词
Bridgman technique; Single crystal growth; Scintillator; Halides; PHASE-DIAGRAM; HALIDE; EMISSION; YIELD; MODEL;
D O I
10.1016/j.nima.2020.164963
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In this work the Bridgman crystal growth and scintillation properties of both undoped and Tl-doped Cs3Cu2I5 are presented. This material is very attractive for gamma and X-ray detection applications, with a density of 4.53 g/cm(3) and effective atomic number of 51.9. Undoped Cs3Cu2I5 had a light yield of 41,500 photons/MeV, with an energy resolution of 4.4% at 662 keV. Thallium doping at 0.5 mol % resulted in a much-improved scintillation response, in which light yield increased to 98,200 photons/MeV and energy resolution reduced to 3.3% at 662 keV. The X-ray excited emission is centered at 442 nm for the undoped and 500 nm for the Tl-doped crystals. The undoped emission is broad, typical of excitonic emission, while thallium doping results in an even broader band with features of both the undoped and thallium defect-mediated emissions.
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页数:9
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