High performance RF integrated passive devices on thick oxide substrate using Cu-BcB process

被引：14

作者：

Jeong, I

Kim, KJ

Kong, TO

Kim, JS

Choi, HK

Nam, CM

Kim, DW

Kwon, YS

机构：

[1] Telephus Inc, Taejon 305343, South Korea

[2] Korea Adv Inst Sci & Technol, Dept EE, Taejon 305701, South Korea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2003年 / 37卷 / 01期

关键词：

IPD (integrated passive device); LPF; balun; Cu process; BCB; multi-layer RF passive devices;

D O I：

10.1002/mop.10821

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we develop a low-cost manufacturing technology for RF substrate and a high-performance process technology for integrated passive devices by electrochemically forming thick oxide on Si wafer and processing Cu thick metal and BCB. Several integrated passive devices such as LPF, BPF, and balun are,fabricated using this technology and they show good RF performance in spite of their small chip size. (C) 2003 Wiley Periodicals, Inc.

引用

页码：49 / 52

页数：4

共 7 条

[1] Characterization and Modeling of on-chip spiral inductors for Si RFICs [J].