Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics

被引：3
|
作者：
He, YD [1 ]
Xu, MZ [1 ]
Tan, CH [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 01期
关键词：
plasma nitrided oxide; rapid thermal oxynitride oxide; gate leakage current; SILC; NBTI; TDDB;
D O I：
10.1016/j.sse.2004.06.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The gate leakage current and reliability concern become more serious due to the aggressive scaling-down of the gate oxide thickness. In this paper, the gate leakage current reduction and reliability optimization with an EOT 15A plasma nitrided gate oxide were explored. The plasma nitrided oxide fabricated by plasma nitridation process demonstrated good gate leakage reduction and high carrier mobility without sacrificing the reliability performance. The optimization of nitrogen profile and post nitridation annealing has been also discussed. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：57 / 61
页数：5
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