Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ.cm2 grown by MIST EPITAXY®

被引：193

作者：

Oda, Masaya ^{[1
]}

Tokuda, Rie ^{[1
]}

Kambara, Hitoshi ^{[1
]}

Tanikawa, Tomochika ^{[1
]}

Sasaki, Takahiro ^{[1
]}

Hitora, Toshimi ^{[1
]}

机构：

[1] FLOSFIA Inc, Kyodai Katsura Venture Plaza, Kyoto 6158245, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 02期

基金：

日本学术振兴会;

关键词：

THIN-FILMS;

D O I：

10.7567/APEX.9.021101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin-film corundum-structured gallium oxide (alpha-Ga2O3) Schottky barrier diodes (SBDs) were fabricated by growing alpha-Ga2O3 layers on sapphire substrates by the safe, low-cost, and energy-saving MIST EPITAXY (R) technique, followed by lifting off the alpha-Ga2O3 layers from the substrates. The SBDs exhibited on-resistance and breakdown voltage of 0.1 m Omega.cm(2) and 531V (SBD1) or 0.4 m Omega.cm(2) and 855V (SBD2), respectively. These results will encourage the future evolution of low-cost and high-performance SBDs with alpha-Ga2O3. (C) 2016 The Japan Society of Applied Physics

引用

页数：3

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