Fabrication and characterization of C60FET using highly c-axis oriented poly-crystalline AlN insulator film

被引：2

作者：

Hashimoto, A. ^{[1
]}

Matsumoto, K. ^{[1
]}

Yamamoto, A. ^{[1
]}

机构：

[1] Univ Fukui, Dept Elect & Elect Engn, Fukui 9108507, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷 / SPEC. ISS.期

关键词：

atomic force microscope; electrical transport; molecular beam epitaxy; fullerenes; aluminum nitride;

D O I：

10.1016/j.jcrysgro.2006.11.310

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Most important problem in C-60 field effect carrier injection technique is how to form an excellent interface between insulator and solid C-60 layers. In this paper, we have investigated the solid C-60 growth on the poly-crystalline AlN (0 0 0 1) layers with the highly and/or the randomly c-axis-oriented surfaces by molecular beam epitaxial (MBE) technique. Moreover, we have compared with the conductive characteristic of the C-60/AlN FET fabricated on the highly and/or the randomly c-axis-oriented poly-crystalline AlN layers. The results strongly indicate that the c-axis orientation is an important factor to improve the performance of the C-60/poly-crystalline AlN FET. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1021 / 1024

页数：4