Novel Cu-Mg-Ni-Zn-Mn oxide thin film electrodes for NIR photodetector applications†

被引：8

作者：

Wang, Tzu-Hsuan ^{[1
]}

Kuo, Chia-Tung ^{[1
]}

Chung, Pin-Hung ^{[1
]}

Liu, Chao-, I ^{[1
]}

Lu, You-Yan ^{[1
]}

Lee, Yi-Ting ^{[1
]}

Yew, Tri-Rung ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, 101,Sec 2,Kuang Fu Rd, Hsinchu 30013, Taiwan

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2021年 / 9卷 / 14期

关键词：

ELECTRICAL-PROPERTIES; INFRARED DETECTORS; ULTRAVIOLET; SENSOR; FTIR;

D O I：

10.1039/d0tc06117d

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study reports the optical and photoconductive characteristics of the Cu-Mg-Ni-Zn-Mn oxide thin films with and without post-annealing in air. The Cu-Mg-Ni-Zn-Mn oxide thin films reveal a narrow bandgap of 1.96 eV and demonstrate the characteristics of an n-type semiconductor. The thin films exhibit a spinel crystal structure characterized by X-ray diffractometer and transmission electron microscopy. The p(+)-Si-substrate/Cu-Mg-Ni-Zn-Mn-oxide/indium-tin-oxide sandwich-structure devices were fabricated for the photoconductive characteristic investigation of Cu-Mg-Ni-Zn-Mn oxide thin films deposited by radio-frequency (RF) sputtering. The devices showed a high external quantum efficiency (EQE) of 96% under 800 nm wavelength illumination at a bias of -2 V. A fast response rise-time of 13 ms and a fall-time of 11 ms were also obtained. Hence, the Cu-Mg-Ni-Zn-Mn oxide thin films pave the way for developing high efficiency Schottky barrier photodetectors.

引用

页码：4961 / 4970

页数：10

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