Simulation, fabrication and testing of bulk micromachined 6H-SiC high-g piezoresistive accelerometers

被引:66
作者
Atwell, AR
Okojie, RS
Kornegay, KT
Roberson, SL
Beliveau, A
机构
[1] NASA, Glenn Res Ctr, Instrumentat Controls Div, Cleveland, OH 44135 USA
[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[3] USAF, Res Lab, Munit Directorate, MNMF,Fuzes Branch, Eglin AFB, FL 32542 USA
[4] Appl Res Associates, Ft Walton Beach, FL 32547 USA
基金
美国国家科学基金会;
关键词
silicon carbide; MEMS; accelerometer; shock testing; piezoresistivity;
D O I
10.1016/S0924-4247(02)00436-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the utilization of key design parameters to simulate, batch-fabricate and evaluate first-generation single crystal 6H-SiC piezoresistive accelerometers for extreme impact applications. High-g simulation results predicted safe operation above 100,000 x g and preliminary experimental tests were successfully performed to 40,000 x g. Sensitivities ranging between 50 and 343 nV/g were measured for differing accelerometer sensing elements. Non-linear behavior was observed over the shock range relative to the commercial benchmark accelerometer. These initial results offer promise for the use of 6H-SiC accelerometers in extreme impact sensing. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:11 / 18
页数:8
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