A two-port ZnO/silicon Lamb wave resonator using phononic crystals

被引：52

作者：

Huang, Chao-Yi ^{[1
]}

Sun, Jia-Hong ^{[1
]}

Wu, Tsung-Tsong ^{[1
]}

机构：

[1] Natl Taiwan Univ, Inst Appl Mech, Taipei 106, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 03期

关键词：

elemental semiconductors; energy gap; finite element analysis; II-VI semiconductors; phononic crystals; semiconductor devices; silicon; surface acoustic wave resonators; surface acoustic waves; wide band gap semiconductors; BAND-STRUCTURE;

D O I：

10.1063/1.3467145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present numerical and experimental studies on a two-port ZnO/silicon Lamb wave resonator using two-dimensional phononic-crystal (PC) gratings. Band gaps and reflections of Lamb waves in PC structures were analyzed using the finite element method. Constructive interference was obtained with suitable reflective distance between wave sources and the PC. The simulated result was utilized to optimize the design of Lamb wave resonators. On the experimental side, a layered ZnO/Si Lamb wave resonator with square-lattice PC reflective gratings was fabricated. The measurement showed that with 15-row PCs, the resonator Q factor can be up to 2269 at 158.15 MHz resonant frequency. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467145]

引用

页数：3

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