A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes

被引：13

作者：

Mutamba, K ^{[1
]}

Sigurdardottir, A

Vogt, A

Hartnagel, HL

Li, EH

机构：

[1] Tech Univ Darmstadt, Inst Hochfrequenztech, D-64283 Darmstadt, Germany

[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 13期

关键词：

D O I：

10.1063/1.121135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the effects of uniaxial pressure on (001)-oriented AlGaAs/GaAs and InAs/AlSb/GaSb double barrier resonant tunneling diodes (RTDs). The current-voltage characteristics of the AlGaAs/GaAs RTDs shift asymmetrically due to stress-induced piezoelectric fields in the barriers and well structures. Although all the materials involved are piezoelectric, the interband InAs/AlSb/GaSb resonant tunneling device surprisingly shows, in contrast to the AlGaAs/GaAs one, a symmetrical behavior for the same orientation [110] of the applied pressure. We explain the observed differences considering the different tunneling paths involved in the conduction mechanism of the two heterostructure devi-e types as well as their pressure dependencies. (C) 1998 American Institute of Physics.

引用

页码：1629 / 1631

页数：3

共 17 条

[1] THE PRESSURE-DEPENDENCE OF THE TUNNELING CURRENT IN SINGLE-BARRIER ALAS/GAAS STRUCTURES [J].

AUSTING, DG ;

KLIPSTEIN, PC ;

ROBERTS, JS ;

HILL, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (05) :616-623

[2]

AUSTING DG, 1991, NATO ADV SCI I B-PHY, V277, P157

[3]

BHYKHOVSKI AD, 1997, J APPL PHYS, V81, P6332

[4] A PIEZORESISTIVE GAAS PRESSURE SENSOR WITH GAAS/ALGAAS MEMBRANE TECHNOLOGY [J].

DEHE, A ;

FRICKE, K ;

MUTAMBA, K ;

HARTNAGEL, HL .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1995, 5 (02) :139-142

[5] The physics and technology of gallium antimonide: An emerging optoelectronic material [J].

Dutta, PS ;

Bhat, HL ;

Kumar, V .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :5821-5870

[6] A GAAS PRESSURE SENSOR-BASED ON RESONANT-TUNNELING DIODES [J].

FOBELETS, K ;

VOUNCKX, R ;

BORGHS, G .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1994, 4 (03) :123-128

[7] PRESSURE MEASUREMENT BY GAAS PIEZOELECTRIC SENSORS [J].

FRICKE, K ;

HARTNAGEL, HL .

ELECTRONICS LETTERS, 1990, 26 (11) :693-694

[8] MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

HENDERSON, T ;

AKSUN, MI ;

PENG, CK ;

MORKOC, H ;

CHAO, PC ;

SMITH, PM ;

DUH, KHG ;

LESTER, LF .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :649-651

[9] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J].

HENSEL, JC ;

FEHER, G .

PHYSICAL REVIEW, 1963, 129 (03) :1041-&

[10]

HJORT K, 1993, THESIS U UPPSALA SWE

← 1 2 →