Low subthreshold slope in junctionless multigate transistors

被引：116

作者：

Lee, Chi-Woo ^{[1
]}

Nazarov, Alexei N. ^{[2
]}

Ferain, Isabelle ^{[1
]}

Akhavan, Nima Dehdashti ^{[1
]}

Yan, Ran ^{[1
]}

Razavi, Pedram ^{[1
]}

Yu, Ran ^{[1
]}

Doria, Rodrigo T. ^{[1
,3
,4
]}

Colinge, Jean-Pierre ^{[1
]}

机构：

[1] Univ Coll Cork Lee Maltings, Tyndall Natl Inst, Cork, Ireland

[2] Lashkaryov Inst Semicond Phys, Kiev, Ukraine

[3] Ctr Univ FEI, Dept Engn Eletr, Sao Bernardo Do Campo, Brazil

[4] Univ Sao Paulo, PSI, LSI, Sao Paulo, Brazil

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 10期

基金：

爱尔兰科学基金会;

关键词：

IMPACT IONIZATION; SILICON;

D O I：

10.1063/1.3358131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The improvement of subthreshold slope due to impact ionization is compared between "standard" inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3358131]

引用

页数：3

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