Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors

被引：9

作者：

Jiao, G. F. ^{[1
]}

Chen, Z. X. ^{[2
,3
]}

Yu, H. Y. ^{[2
,3
]}

Huang, X. Y. ^{[1
]}

Huang, D. M. ^{[1
]}

Singh, N. ^{[2
]}

Lo, G. Q. ^{[2
]}

Kwong, D. -L. ^{[2
]}

Li, Ming-Fu ^{[1
,2
]}

机构：

[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[2] ASTAR, Inst Microelect, Singapore 117685, Singapore

[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Bias temperature instability (BTI); CMOS transistors; hot-carrier effect (HCE); reliability; tunneling field-effect transistor (TFET); FET;

D O I：

10.1109/LED.2010.2042923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report, for the first time, the reliability issues of tunneling field-effect transistors (TFETs) by experiments. We observed that the overall reliability performance of n-TFETs is very different from those of the conventional n-MOSFET. The degradation of n-TFETs under positive bias temperature instability (PBTI) stress is very large compared with the negligible degradation for the conventional n-MOSFET. The degradation of n-TFETs under hot-carrier stress is also larger than that in the conventional n-MOSFET and has a different temperature dependence. The shifts of the I-d-V-g curves under PBTI stress are not parallel in the strong inversion region as in the case of the conventional n-MOSFET. The different degradation behaviors are explained by different degradation mechanisms due to some inherent properties of TFETs.

引用

页码：396 / 398

页数：3

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